Parametric results for: MMFTP3160 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

2 hits Apply

Drain Current-Max (ID) (1)

2.6 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

90 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

40 pF 2

2 hits Apply

TO-236 2

2 hits Apply

R-PDSO-G3 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (1)

Diotec Semiconductor AG 2

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

-55.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 2

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

2 hits Apply

1.4 W 2

2 hits Apply

1.4 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply