Parametric results for: MMDF3N02HD under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 5 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 3

11 hits Apply

405.0 mJ 8

11 hits Apply

Configuration (3)

SEPARATE, 2 ELEMENTS 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 3 SINGLE WITH BUILT-IN DIODE 5

11 hits Apply

DS Breakdown Voltage-Min (1)

20 V 10

11 hits Apply

Drain Current-Max (Abs) (ID) (2)

3 A 1 3.8 A 1

Min (A) - Max (A)

11 hits Apply

Drain Current-Max (ID) (2)

3 A 2 3.8 A 8

Min (A) - Max (A)

11 hits Apply

Drain-source On Resistance-Max (1)

90 mΩ 10

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

R-PDSO-G8 10

11 hits Apply

e0 7 e3 1

11 hits Apply

Manufacturer (5)

Freescale Semiconductor 2 Motorola Mobility LLC 3 Motorola Semiconductor Products 3 onsemi 2 Rochester Electronics LLC 1

11 hits Apply

1 2 NOT SPECIFIED 1

11 hits Apply

Number of Elements (2)

1 5 2 5

Min - Max

11 hits Apply

Number of Terminals (1)

8 10

11 hits Apply

ENHANCEMENT MODE 11

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150.0 °C 6

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PLASTIC/EPOXY 10

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RECTANGULAR 10

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SMALL OUTLINE 10

11 hits Apply

Active 1 Obsolete 8 Transferred 2

11 hits Apply

No 3 Yes 1

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235 1 240 1 260 1 NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

1.5 W 3 2 W 3

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply