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MLD1N06CLT4G
onsemi
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$1.1438 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR | 2 | 59 V | 1 | 1 A | 750 mΩ | LOGIC LEVEL COMPATIBLE | 80 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 40 W | 1.8 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 150 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | ON SEMICONDUCTOR | DPAK (SINGLE GAUGE) TO-252 | SMALL OUTLINE, R-PSSO-G2 | 3 | 369C | not_compliant | EAR99 | onsemi | ||||||||
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MLD1N06CLT4G
Rochester Electronics LLC
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Check for Price | No | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR | 2 | 59 V | 1 | 1 A | 750 mΩ | LOGIC LEVEL COMPATIBLE | 80 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.8 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | COMMERCIAL | NOT SPECIFIED | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | CASE 369C, DPAK-3 | 3 | CASE 369C | unknown | |||||||||||
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MLD1N06CLT4
onsemi
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR | 2 | 59 V | 1 | 1 A | 750 mΩ | LOGIC LEVEL COMPATIBLE | 80 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 40 W | 1.8 A | SWITCHING | SILICON | R-PSSO-G2 | e0 | Not Qualified | 150 °C | 235 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn80Pb20) | GULL WING | SINGLE | ON SEMICONDUCTOR | DPAK (SINGLE GAUGE) TO-252 | SMALL OUTLINE, R-PSSO-G2 | 3 | 369C | not_compliant | EAR99 | onsemi | ||||||||
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MLD1N06CLT4
Rochester Electronics LLC
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Check for Price | No | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR | 2 | 59 V | 1 | 1 A | 750 mΩ | LOGIC LEVEL COMPATIBLE | 80 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.8 A | SWITCHING | SILICON | R-PSSO-G2 | e0 | COMMERCIAL | NOT SPECIFIED | 240 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | CASE 369C, DPAK-3 | 3 | CASE 369C | unknown | |||||||||||
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MLD1N06CLT4
Motorola Semiconductor Products
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Check for Price | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR | 2 | 59 V | 1 | 1 A | 750 mΩ | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | 80 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 40 W | 1.8 A | SWITCHING | SILICON | 11 ns | 8 ns | R-PSSO-G2 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | MOTOROLA INC | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | 8541.29.00.95 | ||||||||||||||
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MLD1N06CLT4
Motorola Mobility LLC
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Check for Price | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR | 2 | 59 V | 1 | 1 A | 750 mΩ | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | 80 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 40 W | 1.8 A | SWITCHING | SILICON | 11 ns | 8 ns | R-PSSO-G2 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | MOTOROLA INC | SMALL OUTLINE, R-PSSO-G2 | unknown | EAR99 | 8541.29.00.95 |