Parametric results for: MJD31CT4GN under Power Bipolar Transistors

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Manufacturer Part Number: mjd31ct4g
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MJD31CT4G
onsemi
$0.2872 Yes Active 100 V 3 A NPN YES SINGLE 2 1 10 3 MHz 15 W AMPLIFIER SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE ONSEMI DPAK (SINGLE GAUGE) TO-252 DPAK-3 3 369C not_compliant EAR99 8541.29.00.95 onsemi
NJVMJD31CT4G
onsemi
$0.3649 Yes Active 100 V 3 A NPN YES SINGLE 2 1 10 3 MHz 15 W SILICON R-PSSO-G2 e3 AEC-Q101 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE ONSEMI DPAK (SINGLE GAUGE) TO-252 DPAK-3/2 3 369C not_compliant EAR99 onsemi
NJVMJD31CT4G-VF01
onsemi
Check for Price Yes Yes Obsolete 100 V 3 A NPN YES SINGLE 2 1 10 3 MHz AMPLIFIER SILICON R-PSSO-G2 e3 AEC-Q101 1 150 °C -65 °C 260 30 COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE ONSEMI DPAK-3/2 369C not_compliant EAR99 onsemi 2017-02-10