Parametric results for: MH4V325CJJ-6S under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Alternate Memory Width I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE WITH EDO 1

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Access Time-Max (1)

60 ns 1

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RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH 1

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16 1

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COMMON 1

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R-XDMA-N72 1

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Manufacturer (1)

Mitsubishi Electric 1

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Memory Density (1)

134.2177 Mbit 1

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EDO DRAM MODULE 1

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Memory Width (1)

32 1

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1.0 1

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1 1

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72 1

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4.1943 M 1

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4000000.0 1

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ASYNCHRONOUS 1

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70.0 °C 1

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0.0 °C 1

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Organization (1)

4MX32 1

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3-STATE 1

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UNSPECIFIED 1

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DIMM 1

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DIMM72 1

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RECTANGULAR 1

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MICROELECTRONIC ASSEMBLY 1

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Refresh Cycles (1)

2048 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply