Parametric results for: MH2M04B1J-10 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

NIBBLE 1

1 hit Apply

Access Time-Max (1)

100 ns 1

1 hit Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1

1 hit Apply

COMMON 1

1 hit Apply

R-XSMA-N30 1

1 hit Apply

Manufacturer (1)

Mitsubishi Electric 1

1 hit Apply

Memory Density (1)

8.3886 Mbit 1

1 hit Apply

DRAM MODULE 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

30 1

1 hit Apply

1.0486 M 1

1 hit Apply

1000000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

1MX8 1

1 hit Apply

3-STATE 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

SIMM 1

1 hit Apply

SIM30 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

MICROELECTRONIC ASSEMBLY 1

1 hit Apply

Refresh Cycles (1)

512 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply