Parametric results for: MGSF3455VT1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

5 hits Apply

Drain Current-Max (Abs) (ID) (1)

3.5 A 1

5 hits Apply

Drain Current-Max (ID) (1)

3.5 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

100 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G6 4

5 hits Apply

e0 4

5 hits Apply

Manufacturer (5)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 onsemi 1 Rochester Electronics LLC 1

5 hits Apply

NOT SPECIFIED 1

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Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

6 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Active 1 Obsolete 2 Transferred 2

5 hits Apply

No 1

5 hits Apply

235 1 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

5 hits Apply

2 W 2

5 hits Apply

2 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply