Parametric results for: MGFS52BN2122A under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

HIGH RELIABILITY 1

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SOURCE 1

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Configuration (1)

SINGLE 1

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DS Breakdown Voltage-Min (1)

12 V 1

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Drain Current-Max (ID) (1)

4 A 1

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JUNCTION 1

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Highest Frequency Band (1)

S BAND 1

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R-CDFM-F4 1

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Manufacturer (1)

Mitsubishi Electric 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

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DEPLETION MODE 1

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175.0 °C 1

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CERAMIC, METAL-SEALED COFIRED 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Obsolete 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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187.5 W 1

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Surface Mount (1)

YES 1

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