Parametric results for: MGF4953A under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 1

1 hit Apply

SOURCE 1

1 hit Apply

Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

2 V 1

1 hit Apply

Drain Current-Max (ID) (1)

10 mA 1

1 hit Apply

HIGH ELECTRON MOBILITY 1

1 hit Apply

Highest Frequency Band (1)

K BAND 1

1 hit Apply

S-CBCC-N4 1

1 hit Apply

Manufacturer (1)

Mitsubishi Electric 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

4 1

1 hit Apply

DEPLETION MODE 1

1 hit Apply

125.0 °C 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

1 hit Apply

SQUARE 1

1 hit Apply

CHIP CARRIER 1

1 hit Apply

Obsolete 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

50 mW 1

1 hit Apply

Power Gain-Min (Gp) (1)

12.0 dB 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply