Parametric results for: MGF4916 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 3

5 hits Apply

SOURCE 3

5 hits Apply

Configuration (1)

SINGLE 3

5 hits Apply

Drain Current-Max (ID) (1)

60 mA 5

5 hits Apply

HIGH ELECTRON MOBILITY 3 METAL SEMICONDUCTOR 2

5 hits Apply

Highest Frequency Band (2)

K BAND 2 KU BAND 1

5 hits Apply

O-CRDB-F4 2 X-XXMW-F4 1

5 hits Apply

Manufacturer (1)

Mitsubishi Electric 5

5 hits Apply

Number of Elements (1)

1 3

5 hits Apply

Number of Terminals (1)

4 3

5 hits Apply

DEPLETION MODE 3

5 hits Apply

125.0 °C 5

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 UNSPECIFIED 1

5 hits Apply

ROUND 2 UNSPECIFIED 1

5 hits Apply

DISK BUTTON 2 MICROWAVE 1

5 hits Apply

Active 2 Obsolete 3

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

50 mW 3

5 hits Apply

Power Gain-Min (Gp) (3)

7.4 dB 1 7.8 dB 1 12.0 dB 1

Min (dB) - Max (dB)

5 hits Apply

Surface Mount (1)

YES 3

5 hits Apply