Parametric results for: MGF1414 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 3 LOW NOISE, HIGH RELIABILITY 3

8 hits Apply

SOURCE 6

8 hits Apply

Configuration (1)

SINGLE 6

8 hits Apply

DS Breakdown Voltage-Min (1)

3 V 1

8 hits Apply

Drain Current-Max (ID) (1)

100 mA 8

8 hits Apply

JUNCTION 3 METAL SEMICONDUCTOR 5

8 hits Apply

Highest Frequency Band (2)

S BAND 3 X BAND 4

8 hits Apply

R-CQMW-F4 3 S-CQMW-F4 3

8 hits Apply

e0 1

8 hits Apply

Manufacturer (1)

Mitsubishi Electric 8

8 hits Apply

Number of Elements (1)

1 6

8 hits Apply

Number of Terminals (1)

4 6

8 hits Apply

DEPLETION MODE 6

8 hits Apply

150.0 °C 1 175.0 °C 5

Min (°C) - Max (°C)

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 6

8 hits Apply

RECTANGULAR 3 SQUARE 3

8 hits Apply

MICROWAVE 6

8 hits Apply

Active 1 Obsolete 7

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

300 mW 1 360 mW 2

Min (W) - Max (W)

8 hits Apply

Power Gain-Min (Gp) (3)

5.0 dB 1 9.6 dB 3 11.0 dB 3

Min (dB) - Max (dB)

8 hits Apply

Surface Mount (1)

YES 6

8 hits Apply