Parametric results for: MGF0920A under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

SOURCE 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

10 V 3

3 hits Apply

Drain Current-Max (ID) (1)

400 mA 3

3 hits Apply

JUNCTION 3

3 hits Apply

Highest Frequency Band (1)

S BAND 3

3 hits Apply

R-CQCC-N3 3

3 hits Apply

Manufacturer (1)

Mitsubishi Electric 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

DEPLETION MODE 3

3 hits Apply

175.0 °C 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

CHIP CARRIER 3

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

8.3 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply