Parametric results for: MGF0907 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

SOURCE 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

10 V 1

3 hits Apply

Drain Current-Max (ID) (3)

2.4 A 1 6 A 1 7 A 1

Min (A) - Max (A)

3 hits Apply

JUNCTION 2 METAL SEMICONDUCTOR 1

3 hits Apply

Highest Frequency Band (2)

S BAND 2 ULTRA HIGH FREQUENCY BAND 1

3 hits Apply

R-CDFM-F2 2 R-MDFM-F2 1

3 hits Apply

Manufacturer (1)

Mitsubishi Electric 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

DEPLETION MODE 3

3 hits Apply

175.0 °C 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 METAL 1

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

37.5 W 3

3 hits Apply

Power Gain-Min (Gp) (2)

8.0 dB 2 9.0 dB 1

Min (dB) - Max (dB)

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply