Parametric results for: MG100H2YL1 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Fall Time-Max (tf) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ISOLATED 1

3 hits Apply

Collector Current-Max (IC) (1)

100 A 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

550 V 1

3 hits Apply

Configuration (1)

COMPLEX 1

3 hits Apply

DC Current Gain-Min (hFE) (1)

80.0 3

3 hits Apply

4 µs 2

3 hits Apply

R-PUFM-X7 1

3 hits Apply

Manufacturer (3)

IXYS Corporation 1 IXYS UK Westcode 1 Toshiba America Electronic Components 1

3 hits Apply

Number of Elements (2)

1 2 2 1

Min - Max

3 hits Apply

Number of Terminals (1)

7 1

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

FLANGE MOUNT 1

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

Polarity/Channel Type (1)

NPN 1

3 hits Apply

400 W 2

3 hits Apply

Surface Mount (1)

NO 1

3 hits Apply