Parametric results for: MCM511000AP10 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Power Supplies Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE 2

3 hits Apply

Access Time-Max (1)

100 ns 3

3 hits Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 2

3 hits Apply

SEPARATE 3

3 hits Apply

R-PDIP-T18 3

3 hits Apply

e0 3

3 hits Apply

22.1 mm 2

3 hits Apply

Manufacturer (3)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1

3 hits Apply

Memory Density (1)

1.0486 Mbit 3

3 hits Apply

FAST PAGE DRAM 3

3 hits Apply

Memory Width (1)

1 3

3 hits Apply

1.0 2

3 hits Apply

1 2

3 hits Apply

18 3

3 hits Apply

1.0486 M 3

3 hits Apply

1000000.0 3

3 hits Apply

ASYNCHRONOUS 2

3 hits Apply

70.0 °C 3

3 hits Apply

0.0 °C 3

3 hits Apply

Organization (1)

1MX1 3

3 hits Apply

3-STATE 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

DIP 3

3 hits Apply

DIP18,.3 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 3

3 hits Apply

Power Supplies (1)

5 V 1

3 hits Apply

Refresh Cycles (1)

512 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 3

3 hits Apply