Parametric results for: MC-4R256CEE6B-845 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

BLOCK ORIENTED PROTOCOL 1

2 hits Apply

Access Time-Max (1)

45 ns 1

2 hits Apply

SELF REFRESH 1

2 hits Apply

Clock Frequency-Max (fCLK) (1)

800 MHz 1

2 hits Apply

COMMON 1

2 hits Apply

R-PDMA-N184 1 R-XDMA-N184 1

2 hits Apply

Manufacturer (2)

NEC Electronics Group 1 Renesas Electronics Corporation 1

2 hits Apply

Memory Density (1)

2.1475 Gbit 2

2 hits Apply

RAMBUS DRAM MODULE 2

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

1.0 1

2 hits Apply

1 1

2 hits Apply

184 2

2 hits Apply

134.2177 M 2

2 hits Apply

1.28E8 2

2 hits Apply

SYNCHRONOUS 1

2 hits Apply

Organization (1)

128MX16 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 1 UNSPECIFIED 1

2 hits Apply

DIMM 1

2 hits Apply

DIMM184,40 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

MICROELECTRONIC ASSEMBLY 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

2.5 V 1

2 hits Apply