Parametric results for: MC-45V8AD641ES- under DRAMs

All Filters Access Time-Max Clock Frequency-Max (fCLK) I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (3)

5.4 ns 1 6 ns 1 12 ns 1

Min (ns) - Max (ns)

3 hits Apply

Clock Frequency-Max (fCLK) (3)

66 MHz 1 100 MHz 1 133 MHz 1

Min (MHz) - Max (MHz)

3 hits Apply

COMMON 3

3 hits Apply

R-PDMA-N144 3

3 hits Apply

Manufacturer (1)

Renesas Electronics Corporation 3

3 hits Apply

Memory Density (1)

536.8709 Mbit 3

3 hits Apply

SYNCHRONOUS DRAM MODULE 3

3 hits Apply

Memory Width (1)

64 3

3 hits Apply

144 3

3 hits Apply

8.3886 M 3

3 hits Apply

8000000.0 3

3 hits Apply

70.0 °C 3

3 hits Apply

0.0 °C 3

3 hits Apply

Organization (1)

8MX64 3

3 hits Apply

3-STATE 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

DIMM 3

3 hits Apply

DIMM144,32 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

MICROELECTRONIC ASSEMBLY 3

3 hits Apply

Refresh Cycles (1)

4096 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 3

3 hits Apply