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MBM29DL322BE90PBT
Spansion
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 8K,64K | 2MX16 | 3 V | 90 ns | FLASH | ALSO CONFIGURABLE AS 4M X 8 | 8 | BOTTOM | YES | YES | YES | 1 | 8,63 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 53 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B63 | Not Qualified | e0 | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | TFBGA | BGA63,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7 mm | SPANSION INC | BGA | PLASTIC, FBGA-63 | 63 | compliant | EAR99 | 8542.32.00.51 | ||
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MBM29DL322BE-90PBT
FUJITSU Limited
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Check for Price | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | 90 ns | FLASH | 8 | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 2.7 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B63 | Not Qualified | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7 mm | FUJITSU SEMICONDUCTOR AMERICA INC | BGA | TFBGA, | 63 | unknown | ||||||||||||||||||||
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MBM29DL322BE90PBT
FUJITSU Limited
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 8K,64K | 2MX16 | 3 V | 90 ns | FLASH | 100000 ERASE CYCLES | 8 | BOTTOM | YES | YES | YES | 1 | 8,63 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 53 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B63 | Not Qualified | e0 | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | TFBGA | BGA63,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7 mm | FUJITSU LTD | BGA | PLASTIC, FBGA-63 | 63 | unknown | EAR99 | 8542.32.00.51 | ||
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MBM29DL322BE90PBT
FUJITSU Semiconductor Limited
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Check for Price | Transferred | 33.5544 Mbit | 16 | 2MX16 | 3 V | 90 ns | FLASH | 8 | BOTTOM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PBGA-B63 | Not Qualified | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7 mm | FUJITSU SEMICONDUCTOR AMERICA INC | BGA | PLASTIC, FBGA-63 | 63 | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||
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MBM29DL322BE90PBT-E1
Spansion
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Check for Price | Yes | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | 90 ns | FLASH | ALSO CONFIGURABLE AS 4M X 8 | 8 | BOTTOM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PBGA-B63 | Not Qualified | e1 | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7 mm | SPANSION INC | BGA | PLASTIC, FBGA-63 | 63 | compliant | EAR99 | 8542.32.00.51 |