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MBM29DL321BD12PBT
FUJITSU Semiconductor Limited
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Check for Price | Transferred | 33.5544 Mbit | 16 | 2MX16 | 3 V | 120 ns | FLASH | 8 | BOTTOM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PBGA-B57 | Not Qualified | 85 °C | -40 °C | 57 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13.95 mm | 7.95 mm | FUJITSU SEMICONDUCTOR AMERICA INC | TFBGA, | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||||
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MBM29DL321BD12PBT-E1
Spansion
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Check for Price | Yes | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | 120 ns | FLASH | 8 | BOTTOM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PBGA-B57 | Not Qualified | e1 | 85 °C | -40 °C | 57 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13.95 mm | 7.95 mm | SPANSION INC | TFBGA, | compliant | EAR99 | 8542.32.00.51 | BGA | 57 | |||||||||||||
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MBM29DL321BD-12PBT
FUJITSU Semiconductor Limited
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Check for Price | No | Obsolete | 33.5544 Mbit | 8 | 8K,64K | 4MX8 | 3 V | 120 ns | FLASH | CONFIGURABLE AS 2M X 16 | 8 | BOTTOM | YES | YES | YES | 1 | 8,63 | 4000000 | 4.1943 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 53 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B57 | Not Qualified | e0 | 85 °C | -40 °C | 57 | PLASTIC/EPOXY | TFBGA | BGA56,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.2 mm | 13.95 mm | 7.95 mm | FUJITSU LTD | TFBGA, BGA56,8X12,32 | unknown | EAR99 | 8542.32.00.51 | BGA | 57 | ||
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MBM29DL321BD-12PBT
FUJITSU Limited
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Check for Price | No | Obsolete | 33.5544 Mbit | 8 | 8K,64K | 4MX8 | 3 V | 120 ns | FLASH | CONFIGURABLE AS 2M X 16 | 8 | BOTTOM | YES | YES | YES | 1 | 8,63 | 4000000 | 4.1943 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 53 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B57 | Not Qualified | e0 | 85 °C | -40 °C | 57 | PLASTIC/EPOXY | TFBGA | BGA56,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.2 mm | 13.95 mm | 7.95 mm | FUJITSU LTD | TFBGA, BGA56,8X12,32 | unknown | EAR99 | 8542.32.00.51 | ||||
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MBM29DL321BD12PBT
FUJITSU Limited
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Check for Price | Transferred | 33.5544 Mbit | 16 | 2MX16 | 3 V | 120 ns | FLASH | 8 | BOTTOM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PBGA-B57 | Not Qualified | 85 °C | -40 °C | 57 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13.95 mm | 7.95 mm | FUJITSU SEMICONDUCTOR AMERICA INC | TFBGA, | unknown | EAR99 | 8542.32.00.51 | BGA | 57 | ||||||||||||||||
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MBM29DL321BD12PBT
Spansion
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | 120 ns | FLASH | 8 | BOTTOM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PBGA-B57 | Not Qualified | e0 | 85 °C | -40 °C | 57 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 13.95 mm | 7.95 mm | SPANSION INC | TFBGA, | compliant | EAR99 | 8542.32.00.51 | BGA | 57 |