Findchips: Parametric Search Results for MB84VD22388EJ-85


Select Parts		Part Number

		MB84VD22388EJ-85-PBS-E1 Spansion
		MB84VD22388EJ-85-PBS FUJITSU Semiconductor Limited
		MB84VD22388EJ-85-PBS FUJITSU Limited
		MB84VD22388EJ-85-PBS Cypress Semiconductor
		MB84VD22388EJ-85-PBS Spansion

				Most Relevant						Technical													Compliance			Operating Conditions		Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Power Supplies	Access Time-Max	Memory IC Type	Additional Feature	Mixed Memory Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Yes

Obsolete

33.5544 Mbit

2MX16

3 V

MEMORY CIRCUIT

FCRAM IS ORGANIZED AS 1M X 16; IT ALSO REQUIRES 2.7V TO 3.1V SUPPLY FOR FCRAM

2000000

2.0972 M

ASYNCHRONOUS

3.3 V

2.7 V

CMOS

OTHER

R-PBGA-B71

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

11 mm

7 mm

SPANSION INC

BGA

TFBGA,

compliant

EAR99

8542.32.00.71

Check for Price

Active

33.5544 Mbit

2MX16

3 V

85 ns

MEMORY CIRCUIT

FCRAM IS ORGANISED AS 1M X 16 AND OPERATES AT 2.7V TO 3.1V SUPPLY

FLASH+SRAM

2000000

2.0972 M

ASYNCHRONOUS

5 µA

53 µA

3.3 V

2.7 V

CMOS

OTHER

R-PBGA-B71

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA71,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

11 mm

7 mm

FUJITSU LTD

BGA

TFBGA, BGA71,8X12,32

compliant

EAR99

8542.32.00.71

Check for Price

Active

33.5544 Mbit

2MX16

3 V

85 ns

MEMORY CIRCUIT

FCRAM IS ORGANISED AS 1M X 16 AND OPERATES AT 2.7V TO 3.1V SUPPLY

FLASH+SRAM

2000000

2.0972 M

ASYNCHRONOUS

5 µA

53 µA

3.3 V

2.7 V

CMOS

OTHER

R-PBGA-B71

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA71,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

11 mm

7 mm

FUJITSU LTD

TFBGA, BGA71,8X12,32

compliant

EAR99

8542.32.00.71

Check for Price

Active

3 V

85 ns

MEMORY CIRCUIT

FLASH+PSRAM

5 µA

53 µA

CMOS

OTHER

R-PBGA-B71

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA71,8X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

Check for Price

Obsolete

33.5544 Mbit

2MX16

3 V

85 ns

MEMORY CIRCUIT

FCRAM IS ORGANIZED AS 1M X 16; IT ALSO REQUIRES 2.7V TO 3.1V SUPPLY FOR FCRAM

FLASH+PSRAM

2000000

2.0972 M

ASYNCHRONOUS

5 µA

53 µA

3.3 V

2.7 V

CMOS

OTHER

R-PBGA-B71

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA71,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

11 mm

7 mm

SPANSION INC

BGA

TFBGA, BGA71,8X12,32

compliant

EAR99

8542.32.00.71

Compare

MB84VD22388EJ-85-PBS-E1

Spansion

Check for Price

Yes

Obsolete

33.5544 Mbit

2MX16

3 V

MEMORY CIRCUIT

FCRAM IS ORGANIZED AS 1M X 16; IT ALSO REQUIRES 2.7V TO 3.1V SUPPLY FOR FCRAM

2000000

2.0972 M

ASYNCHRONOUS

3.3 V

2.7 V

CMOS

OTHER

R-PBGA-B71

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

11 mm

7 mm

SPANSION INC

BGA

TFBGA,

compliant

EAR99

8542.32.00.71

MB84VD22388EJ-85-PBS

FUJITSU Semiconductor Limited

Check for Price

Active

33.5544 Mbit

2MX16

3 V

85 ns

MEMORY CIRCUIT

FCRAM IS ORGANISED AS 1M X 16 AND OPERATES AT 2.7V TO 3.1V SUPPLY

FLASH+SRAM

2000000

2.0972 M

ASYNCHRONOUS

5 µA

53 µA

3.3 V

2.7 V

CMOS

OTHER

R-PBGA-B71

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA71,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

11 mm

7 mm

FUJITSU LTD

BGA

TFBGA, BGA71,8X12,32

compliant

EAR99

8542.32.00.71

MB84VD22388EJ-85-PBS

FUJITSU Limited

Check for Price

Active

33.5544 Mbit

2MX16

3 V

85 ns

MEMORY CIRCUIT

FCRAM IS ORGANISED AS 1M X 16 AND OPERATES AT 2.7V TO 3.1V SUPPLY

FLASH+SRAM

2000000

2.0972 M

ASYNCHRONOUS

5 µA

53 µA

3.3 V

2.7 V

CMOS

OTHER

R-PBGA-B71

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA71,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

11 mm

7 mm

FUJITSU LTD

TFBGA, BGA71,8X12,32

compliant

EAR99

8542.32.00.71

MB84VD22388EJ-85-PBS

Cypress Semiconductor

Check for Price

Active

3 V

85 ns

MEMORY CIRCUIT

FLASH+PSRAM

5 µA

53 µA

CMOS

OTHER

R-PBGA-B71

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

FBGA

BGA71,8X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

MB84VD22388EJ-85-PBS

Spansion

Check for Price

Obsolete

33.5544 Mbit

2MX16

3 V

85 ns

MEMORY CIRCUIT

FCRAM IS ORGANIZED AS 1M X 16; IT ALSO REQUIRES 2.7V TO 3.1V SUPPLY FOR FCRAM

FLASH+PSRAM

2000000

2.0972 M

ASYNCHRONOUS

5 µA

53 µA

3.3 V

2.7 V

CMOS

OTHER

R-PBGA-B71

Not Qualified

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA71,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

11 mm

7 mm

SPANSION INC

BGA

TFBGA, BGA71,8X12,32

compliant

EAR99

8542.32.00.71

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Parametric results for: MB84VD22388EJ-85 under Other Memory ICs