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MB84VD2008-10
FUJITSU Semiconductor Limited
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Check for Price | No | No | Active | 8.3886 Mbit | 16 | 512KX16 | 100 ns | MEMORY CIRCUIT | SRAM IS ORGANISED AS 128K X 16 | FLASH+SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 50 µA | 60 µA | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B48 | Not Qualified | e0 | 85 °C | -20 °C | 48 | PLASTIC/EPOXY | LBGA | BGA48,6X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.6 mm | 11 mm | 10 mm | FUJITSU LTD | BGA | LBGA, BGA48,6X8,40 | 48 | compliant | EAR99 | 8542.32.00.71 | ||
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MB84VD2008-10
FUJITSU Limited
|
Check for Price | No | Active | 8.3886 Mbit | 16 | 512KX16 | 100 ns | MEMORY CIRCUIT | SRAM IS ORGANISED AS 128K X 16 | FLASH+SRAM | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 50 µA | 60 µA | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B48 | Not Qualified | e0 | 85 °C | -20 °C | 48 | PLASTIC/EPOXY | LBGA | BGA48,6X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.6 mm | 11 mm | 10 mm | FUJITSU LTD | LBGA, BGA48,6X8,40 | compliant | EAR99 | 8542.32.00.71 |