Parametric results for: MB84VD200810 under Other Memory ICs

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Manufacturer Part Number: mb84vd200810
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MB84VD2008-10
FUJITSU Semiconductor Limited
Check for Price No No Active 8.3886 Mbit 16 512KX16 100 ns MEMORY CIRCUIT SRAM IS ORGANISED AS 128K X 16 FLASH+SRAM 1 512000 524.288 k ASYNCHRONOUS 50 µA 60 µA 3.6 V 2.7 V CMOS OTHER R-PBGA-B48 Not Qualified e0 85 °C -20 °C 48 PLASTIC/EPOXY LBGA BGA48,6X8,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES TIN LEAD BALL 1 mm BOTTOM 1.6 mm 11 mm 10 mm FUJITSU LTD BGA LBGA, BGA48,6X8,40 48 compliant EAR99 8542.32.00.71
MB84VD2008-10
FUJITSU Limited
Check for Price No Active 8.3886 Mbit 16 512KX16 100 ns MEMORY CIRCUIT SRAM IS ORGANISED AS 128K X 16 FLASH+SRAM 1 512000 524.288 k ASYNCHRONOUS 50 µA 60 µA 3.6 V 2.7 V CMOS OTHER R-PBGA-B48 Not Qualified e0 85 °C -20 °C 48 PLASTIC/EPOXY LBGA BGA48,6X8,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES TIN LEAD BALL 1 mm BOTTOM 1.6 mm 11 mm 10 mm FUJITSU LTD LBGA, BGA48,6X8,40 compliant EAR99 8542.32.00.71