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MASMBJ18AE3
Microchip Technology Inc
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$5.4078 | Yes | Active | 1.38 W | SILICON | 20 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 18 V | 1 | AVALANCHE | 22.1 V | 600 W | R-PDSO-C2 | e3 | IEC-61000-4-2, 4-4, 4-5; MIL-19500 | DO-214AA | 1 | 150 °C | -65 °C | 260 | 10 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | MICROCHIP TECHNOLOGY INC | SMBJ, 2 PIN | not_compliant | |||||||||||
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MASMBJ18AE3TR
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | 29.2 V | 1.38 W | 21.05 V | SILICON | 20 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 18 V | 1 | AVALANCHE | TR, 7 INCH; 750 | 22.1 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | C BEND | DUAL | MICROSEMI CORP | R-PDSO-C2 | unknown | DO-214AA | 2 | EAR99 | 8541.10.00.50 | |||
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MASMBJ18AE3/TR
Microsemi Corporation
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Check for Price | Yes | Transferred | 29.2 V | 1.38 W | 21.05 V | SILICON | 20 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 18 V | 1 | AVALANCHE | TR, 7 INCH; 750 | 22.1 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | C BEND | DUAL | MICROSEMI CORP | R-PDSO-C2 | not_compliant | EAR99 | 8541.10.00.50 | ||||||
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MASMBJ18AE3/TR13
Microsemi Corporation
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Check for Price | Yes | Transferred | 1.38 W | SILICON | 20 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 18 V | 1 | AVALANCHE | 22.1 V | 600 W | R-PDSO-J2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | J BEND | DUAL | MICROSEMI CORP | R-PDSO-J2 | compliant | EAR99 | 8541.10.00.50 | ||||||||||||
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MASMBJ18AE3
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | 29.2 V | 1.38 W | 21.05 V | SILICON | 20 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 18 V | 1 | AVALANCHE | 22.1 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | MIL-19500 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | C BEND | DUAL | MICROSEMI CORP | ROHS COMPLIANT, PLASTIC PACKAGE-2 | not_compliant | DO-214AA | 2 | EAR99 | 8541.10.00.50 | |||
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MASMBJ18AE3/TR7
Microsemi Corporation
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Check for Price | Yes | Transferred | 1.38 W | SILICON | 20 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 18 V | 1 | AVALANCHE | 22.1 V | 600 W | R-PDSO-J2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | J BEND | DUAL | MICROSEMI CORP | R-PDSO-J2 | compliant | EAR99 | 8541.10.00.50 |