Parametric results for: M95640-WDL3G under EEPROMs

All Filters Additional Feature Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

5 MHz 1

1 hit Apply

40 1

1 hit Apply

1000000.0 Write/Erase Cycles 1

1 hit Apply

R-PDSO-G14 1

1 hit Apply

e4 1

1 hit Apply

5 mm 1

1 hit Apply

Manufacturer (1)

STMicroelectronics 1

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Memory Density (1)

65.536 kbit 1

1 hit Apply

EEPROM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1 1

1 hit Apply

1.0 1

1 hit Apply

14 1

1 hit Apply

8.192 k 1

1 hit Apply

8000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

125.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

8KX8 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSSOP 1

1 hit Apply

TSSOP14,.25 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply