Parametric results for: M95640-WBN3P under EEPROMs

All Filters Additional Feature Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION 1

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Clock Frequency-Max (fCLK) (1)

10 MHz 1

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40 1

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1000000.0 Write/Erase Cycles 1

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R-PDIP-T8 1

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e3 1

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9.27 mm 1

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Manufacturer (1)

STMicroelectronics 1

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Memory Density (1)

65.536 kbit 1

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EEPROM 1

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Memory Width (1)

8 1

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1.0 1

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8 1

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8.192 k 1

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8000.0 1

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SYNCHRONOUS 1

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125.0 °C 1

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-40.0 °C 1

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Organization (1)

8KX8 1

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PLASTIC/EPOXY 1

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DIP 1

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DIP8,.3 1

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RECTANGULAR 1

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IN-LINE 1

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Supply Voltage-Nom (Vsup) (1)

5 V 1

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