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Parametric » Memory » EEPROMs

Parametric results for: M95128-BN3T under EEPROMs

Select parts from the table below to compare.

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Select Parts		Part Number

		M95128-BN3TP STMicroelectronics
		M95128-BN3TG STMicroelectronics
		M95128-BN3T STMicroelectronics

			Most Relevant					Technical														Compliance			Operating Conditions		Physical										Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Clock Frequency-Max (fCLK)	Memory IC Type	Additional Feature	Data Retention Time-Min	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Parallel/Serial	Serial Bus Type	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Write Cycle Time-Max (tWC)	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Yes

Obsolete

131.072 kbit

8

16KX8

5 V

5 MHz

EEPROM

1

16000

16.384 k

SYNCHRONOUS

SERIAL

SPI

5.5 V

4.5 V

CMOS

AUTOMOTIVE

5 ms

R-PDIP-T8

Not Qualified

e3

125 °C

-40 °C

8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

NO

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

DIP,

8

compliant

EAR99

8542.32.00.51

Check for Price

Yes

Obsolete

131.072 kbit

8

16KX8

5 V

5 MHz

EEPROM

1

16000

16.384 k

SYNCHRONOUS

SERIAL

SPI

5.5 V

4.5 V

CMOS

AUTOMOTIVE

5 ms

R-PDIP-T8

Not Qualified

e3

125 °C

-40 °C

8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

NO

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

DIP,

8

compliant

EAR99

8542.32.00.51

Check for Price

Obsolete

131.072 kbit

8

16KX8

5 V

5 MHz

EEPROM

100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

40

1

16000

16.384 k

SYNCHRONOUS

SERIAL

SPI

5.5 V

4.5 V

CMOS

AUTOMOTIVE

5 ms

R-PDIP-T8

Not Qualified

125 °C

-40 °C

8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

NO

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

DIP,

8

unknown

EAR99

8542.32.00.51

Compare

STMicroelectronics

Check for Price

Yes

Obsolete

131.072 kbit

8

16KX8

5 V

5 MHz

EEPROM

1

16000

16.384 k

SYNCHRONOUS

SERIAL

SPI

5.5 V

4.5 V

CMOS

AUTOMOTIVE

5 ms

R-PDIP-T8

Not Qualified

e3

125 °C

-40 °C

8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

NO

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

DIP,

8

compliant

EAR99

8542.32.00.51

STMicroelectronics

Check for Price

Yes

Obsolete

131.072 kbit

8

16KX8

5 V

5 MHz

EEPROM

1

16000

16.384 k

SYNCHRONOUS

SERIAL

SPI

5.5 V

4.5 V

CMOS

AUTOMOTIVE

5 ms

R-PDIP-T8

Not Qualified

e3

125 °C

-40 °C

8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

NO

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

DIP,

8

compliant

EAR99

8542.32.00.51

STMicroelectronics

Check for Price

Obsolete

131.072 kbit

8

16KX8

5 V

5 MHz

EEPROM

100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

40

1

16000

16.384 k

SYNCHRONOUS

SERIAL

SPI

5.5 V

4.5 V

CMOS

AUTOMOTIVE

5 ms

R-PDIP-T8

Not Qualified

125 °C

-40 °C

8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

NO

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

STMICROELECTRONICS

DIP

DIP,

8

unknown

EAR99

8542.32.00.51