Parametric results for: M95080BN under EEPROMs

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Manufacturer Part Number: m95080bn
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M95080-BN6P
STMicroelectronics
Check for Price Yes Obsolete 8.192 kbit 8 1KX8 5 V 10 MHz EEPROM 40 1000000 Write/Erase Cycles 1 1000 1.024 k SYNCHRONOUS SERIAL SPI 2 µA 5 µA 5.5 V 4.5 V CMOS INDUSTRIAL 10 ms HARDWARE/SOFTWARE R-PDIP-T8 Not Qualified e3 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.33 mm 9.27 mm 7.62 mm STMICROELECTRONICS DIP DIP, DIP8,.3 8 compliant EAR99 8542.32.00.51
M95080-BN6
STMicroelectronics
Check for Price No Obsolete 8.192 kbit 8 1KX8 5 V 10 MHz EEPROM MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION 40 1000000 Write/Erase Cycles 1 1000 1.024 k SYNCHRONOUS 3-STATE SERIAL SPI 10 µA 5 µA 5.5 V 4.5 V CMOS INDUSTRIAL 10 ms HARDWARE/SOFTWARE R-PDIP-T8 Not Qualified e0 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO Tin/Lead (Sn60Pb40) THROUGH-HOLE 2.54 mm DUAL 5.33 mm 9.27 mm 7.62 mm STMICROELECTRONICS DIP PLASTIC, DIP-8 8 not_compliant EAR99 8542.32.00.51
M95080-BN6G
STMicroelectronics
Check for Price Yes Obsolete 8.192 kbit 8 1KX8 5 V 10 MHz EEPROM 40 1000000 Write/Erase Cycles 1 1000 1.024 k SYNCHRONOUS SERIAL SPI 2 µA 5 µA 5.5 V 4.5 V CMOS INDUSTRIAL 10 ms HARDWARE/SOFTWARE R-PDIP-T8 Not Qualified e3 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.33 mm 9.27 mm 7.62 mm STMICROELECTRONICS DIP DIP, DIP8,.3 8 compliant EAR99 8542.32.00.51
M95080-BN3P
STMicroelectronics
Check for Price Yes Obsolete 8.192 kbit 8 1KX8 5 V 5 MHz EEPROM 40 1000000 Write/Erase Cycles 1 1000 1.024 k SYNCHRONOUS SERIAL SPI 5 µA 3 µA 5.5 V 4.5 V CMOS AUTOMOTIVE 10 ms HARDWARE/SOFTWARE R-PDIP-T8 Not Qualified e3 125 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.33 mm 9.27 mm 7.62 mm STMICROELECTRONICS DIP DIP, DIP8,.3 8 compliant EAR99 8542.32.00.51
M95080-BN3P/W
STMicroelectronics
Check for Price Yes Obsolete 8.192 kbit 8 1KX8 5 V 5 MHz EEPROM 40 1000000 Write/Erase Cycles 1 1000 1.024 k SYNCHRONOUS SERIAL SPI 5 µA 3 µA 5.5 V 4.5 V CMOS AUTOMOTIVE 10 ms HARDWARE/SOFTWARE R-PDIP-T8 Not Qualified e3 125 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.33 mm 9.27 mm 7.62 mm STMICROELECTRONICS DIP DIP, DIP8,.3 8 compliant EAR99 8542.32.00.51
M95080-BN3G/W
STMicroelectronics
Check for Price Yes Obsolete 8.192 kbit 8 1KX8 5 V 5 MHz EEPROM 40 1000000 Write/Erase Cycles 1 1000 1.024 k SYNCHRONOUS SERIAL SPI 5 µA 3 µA 5.5 V 4.5 V CMOS AUTOMOTIVE 10 ms HARDWARE/SOFTWARE R-PDIP-T8 Not Qualified e3 125 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.33 mm 9.27 mm 7.62 mm STMICROELECTRONICS DIP DIP, DIP8,.3 8 compliant EAR99 8542.32.00.51
M95080-BN3G
STMicroelectronics
Check for Price Yes Obsolete 8.192 kbit 8 1KX8 5 V 5 MHz EEPROM 40 1000000 Write/Erase Cycles 1 1000 1.024 k SYNCHRONOUS SERIAL SPI 5 µA 3 µA 5.5 V 4.5 V CMOS AUTOMOTIVE 10 ms HARDWARE/SOFTWARE R-PDIP-T8 Not Qualified e3 125 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.33 mm 9.27 mm 7.62 mm STMICROELECTRONICS DIP DIP, DIP8,.3 8 compliant EAR99 8542.32.00.51
M95080-BN3G/G
STMicroelectronics
Check for Price Yes Obsolete 8.192 kbit 8 1KX8 5 V EEPROM 40 1000000 Write/Erase Cycles 1000 1.024 k SERIAL SPI 5 µA 4 µA CMOS AUTOMOTIVE HARDWARE/SOFTWARE R-PDIP-T8 Not Qualified e3 125 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO Matte Tin (Sn) THROUGH-HOLE 2.54 mm DUAL STMICROELECTRONICS compliant EAR99 8542.32.00.51
M95080-BN6T
STMicroelectronics
Check for Price Obsolete 8.192 kbit 8 1KX8 5 V 10 MHz EEPROM 1 1000 1.024 k SYNCHRONOUS SERIAL SPI 5.5 V 4.5 V CMOS INDUSTRIAL 10 ms R-PDIP-T8 Not Qualified 85 °C -40 °C 8 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 5.33 mm 9.27 mm 7.62 mm STMICROELECTRONICS DIP DIP, 8 unknown EAR99 8542.32.00.51
M95080-BN5
STMicroelectronics
Check for Price No Obsolete 8.192 kbit 8 1KX8 5 V EEPROM 40 100000 Write/Erase Cycles 1 1000 1.024 k SYNCHRONOUS SERIAL SPI 10 µA 4 µA 5.5 V 4.5 V CMOS OTHER HARDWARE/SOFTWARE R-PDIP-T8 Not Qualified e0 85 °C -20 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.33 mm 9.27 mm 7.62 mm STMICROELECTRONICS DIP 0.25 MM LEAD FRAME, PLASTIC, DIP-8 8 not_compliant EAR99 8542.32.00.51