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M95080-BN6P
STMicroelectronics
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Check for Price | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 10 MHz | EEPROM | 40 | 1000000 Write/Erase Cycles | 1 | 1000 | 1.024 k | SYNCHRONOUS | SERIAL | SPI | 2 µA | 5 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | HARDWARE/SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 9.27 mm | 7.62 mm | STMICROELECTRONICS | DIP | DIP, DIP8,.3 | 8 | compliant | EAR99 | 8542.32.00.51 | ||||
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M95080-BN6
STMicroelectronics
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Check for Price | No | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 10 MHz | EEPROM | MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION | 40 | 1000000 Write/Erase Cycles | 1 | 1000 | 1.024 k | SYNCHRONOUS | 3-STATE | SERIAL | SPI | 10 µA | 5 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | HARDWARE/SOFTWARE | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn60Pb40) | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 9.27 mm | 7.62 mm | STMICROELECTRONICS | DIP | PLASTIC, DIP-8 | 8 | not_compliant | EAR99 | 8542.32.00.51 | ||
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M95080-BN6G
STMicroelectronics
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Check for Price | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 10 MHz | EEPROM | 40 | 1000000 Write/Erase Cycles | 1 | 1000 | 1.024 k | SYNCHRONOUS | SERIAL | SPI | 2 µA | 5 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | HARDWARE/SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 9.27 mm | 7.62 mm | STMICROELECTRONICS | DIP | DIP, DIP8,.3 | 8 | compliant | EAR99 | 8542.32.00.51 | ||||
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M95080-BN3P
STMicroelectronics
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Check for Price | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 5 MHz | EEPROM | 40 | 1000000 Write/Erase Cycles | 1 | 1000 | 1.024 k | SYNCHRONOUS | SERIAL | SPI | 5 µA | 3 µA | 5.5 V | 4.5 V | CMOS | AUTOMOTIVE | 10 ms | HARDWARE/SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 9.27 mm | 7.62 mm | STMICROELECTRONICS | DIP | DIP, DIP8,.3 | 8 | compliant | EAR99 | 8542.32.00.51 | ||||
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M95080-BN3P/W
STMicroelectronics
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Check for Price | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 5 MHz | EEPROM | 40 | 1000000 Write/Erase Cycles | 1 | 1000 | 1.024 k | SYNCHRONOUS | SERIAL | SPI | 5 µA | 3 µA | 5.5 V | 4.5 V | CMOS | AUTOMOTIVE | 10 ms | HARDWARE/SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 9.27 mm | 7.62 mm | STMICROELECTRONICS | DIP | DIP, DIP8,.3 | 8 | compliant | EAR99 | 8542.32.00.51 | ||||
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M95080-BN3G/W
STMicroelectronics
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Check for Price | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 5 MHz | EEPROM | 40 | 1000000 Write/Erase Cycles | 1 | 1000 | 1.024 k | SYNCHRONOUS | SERIAL | SPI | 5 µA | 3 µA | 5.5 V | 4.5 V | CMOS | AUTOMOTIVE | 10 ms | HARDWARE/SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 9.27 mm | 7.62 mm | STMICROELECTRONICS | DIP | DIP, DIP8,.3 | 8 | compliant | EAR99 | 8542.32.00.51 | ||||
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M95080-BN3G
STMicroelectronics
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Check for Price | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 5 MHz | EEPROM | 40 | 1000000 Write/Erase Cycles | 1 | 1000 | 1.024 k | SYNCHRONOUS | SERIAL | SPI | 5 µA | 3 µA | 5.5 V | 4.5 V | CMOS | AUTOMOTIVE | 10 ms | HARDWARE/SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 9.27 mm | 7.62 mm | STMICROELECTRONICS | DIP | DIP, DIP8,.3 | 8 | compliant | EAR99 | 8542.32.00.51 | ||||
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M95080-BN3G/G
STMicroelectronics
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Check for Price | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | EEPROM | 40 | 1000000 Write/Erase Cycles | 1000 | 1.024 k | SERIAL | SPI | 5 µA | 4 µA | CMOS | AUTOMOTIVE | HARDWARE/SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Matte Tin (Sn) | THROUGH-HOLE | 2.54 mm | DUAL | STMICROELECTRONICS | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||||
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M95080-BN6T
STMicroelectronics
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Check for Price | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 10 MHz | EEPROM | 1 | 1000 | 1.024 k | SYNCHRONOUS | SERIAL | SPI | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | R-PDIP-T8 | Not Qualified | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 9.27 mm | 7.62 mm | STMICROELECTRONICS | DIP | DIP, | 8 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
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M95080-BN5
STMicroelectronics
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Check for Price | No | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | EEPROM | 40 | 100000 Write/Erase Cycles | 1 | 1000 | 1.024 k | SYNCHRONOUS | SERIAL | SPI | 10 µA | 4 µA | 5.5 V | 4.5 V | CMOS | OTHER | HARDWARE/SOFTWARE | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -20 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 9.27 mm | 7.62 mm | STMICROELECTRONICS | DIP | 0.25 MM LEAD FRAME, PLASTIC, DIP-8 | 8 | not_compliant | EAR99 | 8542.32.00.51 |