Parametric results for: M95040-RMB3TG/W under EEPROMs

All Filters Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (1)

2 MHz 1

1 hit Apply

40 1

1 hit Apply

1000000.0 Write/Erase Cycles 1

1 hit Apply

R-XDSO-N8 1

1 hit Apply

3 mm 1

1 hit Apply

Manufacturer (1)

STMicroelectronics 1

1 hit Apply

Memory Density (1)

4.096 kbit 1

1 hit Apply

EEPROM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1.0 1

1 hit Apply

8 1

1 hit Apply

512 words 1

1 hit Apply

512.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

125.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

512X8 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

VSON 1

1 hit Apply

SOLCC8,.11,20 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, VERY THIN PROFILE 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

2.5 V 1

1 hit Apply