Parametric results for: M36DR432A under Other Memory ICs

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Manufacturer Part Number: m36dr432a
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M36DR432A120ZA6
STMicroelectronics
Check for Price No Transferred 33.5544 Mbit 16 2MX16 120 ns MEMORY CIRCUIT THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM FLASH+SRAM 1 2000000 2.0972 M ASYNCHRONOUS 40 µA 2.2 V 1.65 V CMOS INDUSTRIAL R-PBGA-B66 Not Qualified e0 85 °C -40 °C 66 PLASTIC/EPOXY LFBGA BGA66,8X12,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.4 mm 12 mm 8 mm STMICROELECTRONICS BGA 0.80 MM PITCH, STACK, LFBGA-66 66 not_compliant EAR99 8542.32.00.71
M36DR432A100ZA6
STMicroelectronics
Check for Price No Transferred 33.5544 Mbit 16 2MX16 100 ns MEMORY CIRCUIT THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM FLASH+SRAM 1 2000000 2.0972 M ASYNCHRONOUS 40 µA 2.2 V 1.65 V CMOS INDUSTRIAL R-PBGA-B66 Not Qualified e0 85 °C -40 °C 66 PLASTIC/EPOXY LFBGA BGA66,8X12,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.4 mm 12 mm 8 mm STMICROELECTRONICS BGA 0.80 MM PITCH, STACK, LFBGA-66 66 not_compliant EAR99 8542.32.00.71
M36DR432A100ZA6C
STMicroelectronics
Check for Price No Transferred 33.5544 Mbit 16 2MX16 100 ns MEMORY CIRCUIT THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM FLASH+SRAM 1 2000000 2.0972 M ASYNCHRONOUS 40 µA 2.2 V 1.65 V CMOS INDUSTRIAL R-PBGA-B66 Not Qualified e0 85 °C -40 °C 66 PLASTIC/EPOXY LFBGA BGA66,8X12,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.4 mm 12 mm 8 mm STMICROELECTRONICS BGA 0.80 MM PITCH, STACK, LFBGA-66 66 not_compliant EAR99 8542.32.00.71
M36DR432AD12ZA6T
STMicroelectronics
Check for Price No Obsolete 33.5544 Mbit 16 2MX16 1.8 V 120 ns MEMORY CIRCUIT SRAM IS ORGANIZED AS 256K X 16 FLASH+SRAM 1 2000000 2.0972 M ASYNCHRONOUS 10 µA 26 µA 2.2 V 1.65 V CMOS INDUSTRIAL R-PBGA-B66 Not Qualified e0 85 °C -40 °C 66 PLASTIC/EPOXY LFBGA BGA66,8X12,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.4 mm 12 mm 8 mm STMICROELECTRONICS BGA 12 X 8 MM, 0.80 MM PITCH, STACK, LFBGA-66 66 not_compliant EAR99 8542.32.00.71
M36DR432A120ZA6T
STMicroelectronics
Check for Price No Transferred 33.5544 Mbit 16 2MX16 120 ns MEMORY CIRCUIT THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM FLASH+SRAM 1 2000000 2.0972 M ASYNCHRONOUS 40 µA 2.2 V 1.65 V CMOS INDUSTRIAL R-PBGA-B66 Not Qualified e0 85 °C -40 °C 66 PLASTIC/EPOXY LFBGA BGA66,8X12,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.4 mm 12 mm 8 mm STMICROELECTRONICS BGA 0.80 MM PITCH, STACK, LFBGA-66 66 not_compliant EAR99 8542.32.00.71
M36DR432AD10ZA6T
STMicroelectronics
Check for Price No Obsolete 33.5544 Mbit 16 2MX16 1.8 V 100 ns MEMORY CIRCUIT SRAM IS ORGANIZED AS 256K X 16 FLASH+SRAM 1 2000000 2.0972 M ASYNCHRONOUS 10 µA 26 µA 2.2 V 1.65 V CMOS INDUSTRIAL R-PBGA-B66 Not Qualified e0 85 °C -40 °C 66 PLASTIC/EPOXY LFBGA BGA66,8X12,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.4 mm 12 mm 8 mm STMICROELECTRONICS BGA 12 X 8 MM, 0.80 MM PITCH, STACK, LFBGA-66 66 not_compliant EAR99 8542.32.00.71
M36DR432A100ZA6T
Numonyx Memory Solutions
Check for Price No Obsolete 33.5544 Mbit 16 2MX16 MEMORY CIRCUIT THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM 1 2000000 2.0972 M ASYNCHRONOUS 2.2 V 1.65 V CMOS INDUSTRIAL R-PBGA-B66 Not Qualified e0 85 °C -40 °C 66 PLASTIC/EPOXY LFBGA RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM 1.4 mm 12 mm 8 mm NUMONYX BGA LFBGA, 66 not_compliant EAR99 8542.32.00.71
M36DR432A120ZA6C
Numonyx Memory Solutions
Check for Price No Obsolete 33.5544 Mbit 16 2MX16 MEMORY CIRCUIT THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM 1 2000000 2.0972 M ASYNCHRONOUS 2.2 V 1.65 V CMOS INDUSTRIAL R-PBGA-B66 Not Qualified e0 85 °C -40 °C 66 PLASTIC/EPOXY LFBGA RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM 1.4 mm 12 mm 8 mm NUMONYX BGA 0.80 MM PITCH, STACK, LFBGA-66 66 not_compliant EAR99 8542.32.00.71
M36DR432A120ZA6
Numonyx Memory Solutions
Check for Price No Obsolete 33.5544 Mbit 16 2MX16 MEMORY CIRCUIT THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM 1 2000000 2.0972 M ASYNCHRONOUS 2.2 V 1.65 V CMOS INDUSTRIAL R-PBGA-B66 Not Qualified e0 85 °C -40 °C 66 PLASTIC/EPOXY LFBGA RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES Tin/Lead (Sn/Pb) BALL 800 µm BOTTOM 1.4 mm 12 mm 8 mm NUMONYX BGA LFBGA, 66 not_compliant EAR99 8542.32.00.71
M36DR432AD85ZA6
STMicroelectronics
Check for Price No Obsolete 33.5544 Mbit 16 2MX16 2 V 85 ns MEMORY CIRCUIT SRAM IS ORGANIZED AS 256K X 16 FLASH+SRAM 1 2000000 2.0972 M ASYNCHRONOUS 10 µA 26 µA 2.2 V 1.8 V CMOS INDUSTRIAL R-PBGA-B66 Not Qualified e0 85 °C -40 °C 66 PLASTIC/EPOXY LFBGA BGA66,8X12,32 RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.4 mm 12 mm 8 mm STMICROELECTRONICS BGA 12 X 8 MM, 0.80 MM PITCH, STACK, LFBGA-66 66 not_compliant EAR99 8542.32.00.71