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M36DR432A120ZA6
STMicroelectronics
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 2MX16 | 120 ns | MEMORY CIRCUIT | THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 40 µA | 2.2 V | 1.65 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | 0.80 MM PITCH, STACK, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | ||||
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M36DR432A100ZA6
STMicroelectronics
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 2MX16 | 100 ns | MEMORY CIRCUIT | THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 40 µA | 2.2 V | 1.65 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | 0.80 MM PITCH, STACK, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | ||||
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M36DR432A100ZA6C
STMicroelectronics
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 2MX16 | 100 ns | MEMORY CIRCUIT | THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 40 µA | 2.2 V | 1.65 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | 0.80 MM PITCH, STACK, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | ||||
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M36DR432AD12ZA6T
STMicroelectronics
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 120 ns | MEMORY CIRCUIT | SRAM IS ORGANIZED AS 256K X 16 | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 10 µA | 26 µA | 2.2 V | 1.65 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | 12 X 8 MM, 0.80 MM PITCH, STACK, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | ||
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M36DR432A120ZA6T
STMicroelectronics
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 2MX16 | 120 ns | MEMORY CIRCUIT | THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 40 µA | 2.2 V | 1.65 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | 0.80 MM PITCH, STACK, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | ||||
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M36DR432AD10ZA6T
STMicroelectronics
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 100 ns | MEMORY CIRCUIT | SRAM IS ORGANIZED AS 256K X 16 | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 10 µA | 26 µA | 2.2 V | 1.65 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | 12 X 8 MM, 0.80 MM PITCH, STACK, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | ||
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M36DR432A100ZA6T
Numonyx Memory Solutions
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | MEMORY CIRCUIT | THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 2.2 V | 1.65 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | NUMONYX | BGA | LFBGA, | 66 | not_compliant | EAR99 | 8542.32.00.71 | ||||||||
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M36DR432A120ZA6C
Numonyx Memory Solutions
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | MEMORY CIRCUIT | THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 2.2 V | 1.65 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | NUMONYX | BGA | 0.80 MM PITCH, STACK, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | ||||||||
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M36DR432A120ZA6
Numonyx Memory Solutions
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | MEMORY CIRCUIT | THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 2.2 V | 1.65 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | NUMONYX | BGA | LFBGA, | 66 | not_compliant | EAR99 | 8542.32.00.71 | ||||||||
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M36DR432AD85ZA6
STMicroelectronics
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 2 V | 85 ns | MEMORY CIRCUIT | SRAM IS ORGANIZED AS 256K X 16 | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 10 µA | 26 µA | 2.2 V | 1.8 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | 12 X 8 MM, 0.80 MM PITCH, STACK, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 |