Parametric results for: M29W640GH90ZA6F under Flash Memories

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Manufacturer Part Number: m29w640gh90za6f
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M29W640GH90ZA6F
Numonyx Memory Solutions
Check for Price Yes Yes Transferred 67.1089 Mbit 16 64K 4MX16 3 V 90 ns FLASH BOTTOM BOOT BLOCK 8 BOTTOM YES YES YES 1 128 4000000 4.1943 M ASYNCHRONOUS 4/8 words PARALLEL 3 V YES 100 µA 10 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B48 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY TFBGA BGA48,6X8,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 6 mm NUMONYX BGA TFBGA, BGA48,6X8,32 48 unknown EAR99 8542.32.00.51
M29W640GH90ZA6F
Micron Technology Inc
Check for Price Yes Obsolete 67.1089 Mbit 16 64K 4MX16 3 V 90 ns FLASH 8 YES YES YES 1 128 4000000 4.1943 M ASYNCHRONOUS 4/8 words PARALLEL 3 V YES 100 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B48 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY TFBGA BGA48,6X8,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 6 mm MICRON TECHNOLOGY INC TFBGA, BGA48,6X8,32 compliant EAR99 8542.32.00.51
M29W640GH90ZA6F
STMicroelectronics
Check for Price Yes Transferred 67.1089 Mbit 16 64K 4MX16 3 V 90 ns FLASH 8 YES YES YES 1 128 4000000 4.1943 M ASYNCHRONOUS 4/8 words PARALLEL 3 V YES 100 µA 10 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B48 Not Qualified e1 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA BGA48,6X8,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 8 mm 6 mm STMICROELECTRONICS BGA TFBGA, BGA48,6X8,32 48 compliant EAR99 8542.32.00.51