Parametric results for: M29F040-150XN6RTR under Flash Memories

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

150 ns 1

1 hit Apply

100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE 1

1 hit Apply

YES 1

1 hit Apply

YES 1

1 hit Apply

20 1

1 hit Apply

100000.0 Write/Erase Cycles 1

1 hit Apply

R-PDSO-G32 1

1 hit Apply

e0 1

1 hit Apply

18.4 mm 1

1 hit Apply

Manufacturer (1)

STMicroelectronics 1

1 hit Apply

Memory Density (1)

4.1943 Mbit 1

1 hit Apply

FLASH 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1.0 1

1 hit Apply

8 1

1 hit Apply

32 1

1 hit Apply

524.288 k 1

1 hit Apply

512000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

512KX8 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSOP1-R 1

1 hit Apply

TSSOP32,.8,20 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE 1

1 hit Apply

Sector Size (1)

64K 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply