Parametric results for: M29DW128F60ZA6F under Flash Memories

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Manufacturer Part Number: m29dw128f60za6f
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M29DW128F60ZA6F
STMicroelectronics
Check for Price Yes Obsolete 134.2177 Mbit 16 8K,64K 8MX16 3 V 60 ns FLASH 100,000 PROGRAM/ERASE CYCLES 8 BOTTOM/TOP YES YES YES 1 16,254 8000000 8.3886 M ASYNCHRONOUS 8/16 words PARALLEL 3 V YES 100 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B64 Not Qualified 85 °C -40 °C 260 40 64 PLASTIC/EPOXY TBGA BGA64,8X8,40 RECTANGULAR GRID ARRAY, THIN PROFILE YES BALL 1 mm BOTTOM 1.2 mm 13 mm 10 mm STMICROELECTRONICS BGA 10 X 13 MM, 1 MM PITCH, LEAD FREE, PLASTIC, TBGA-64 64 compliant EAR99 8542.32.00.51
M29DW128F60ZA6F
Numonyx Memory Solutions
Check for Price Yes Yes Obsolete 134.2177 Mbit 16 8K,64K 8MX16 3 V 60 ns FLASH 8 BOTTOM/TOP YES YES YES 1 16,254 8000000 8.3886 M ASYNCHRONOUS 8/16 words PARALLEL 3 V YES 100 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B64 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 64 PLASTIC/EPOXY TBGA BGA64,8X8,40 RECTANGULAR GRID ARRAY, THIN PROFILE YES BALL 1 mm BOTTOM 1.2 mm 13 mm 10 mm NUMONYX BGA TBGA, BGA64,8X8,40 64 unknown EAR99 8542.32.00.51
M29DW128F60ZA6F
Micron Technology Inc
Check for Price Yes Obsolete 134.2177 Mbit 16 8K,64K 8MX16 60 ns FLASH 8 BOTTOM/TOP YES YES YES 16,254 8000000 8.3886 M 8/16 words PARALLEL YES 100 µA 20 µA CMOS INDUSTRIAL YES NOR TYPE S-PBGA-B64 Not Qualified 85 °C -40 °C 64 PLASTIC/EPOXY BGA BGA64,8X8,40 SQUARE GRID ARRAY YES BALL 1 mm BOTTOM MICRON TECHNOLOGY INC BGA, BGA64,8X8,40 compliant EAR99 8542.32.00.51