Parametric results for: M28LV16-200N1T under EEPROMs

All Filters Access Time-Max JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

200 ns 1

1 hit Apply

R-PDSO-G28 1

1 hit Apply

11.8 mm 1

1 hit Apply

Manufacturer (1)

STMicroelectronics 1

1 hit Apply

Memory Density (1)

16.384 kbit 1

1 hit Apply

EEPROM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1.0 1

1 hit Apply

28 1

1 hit Apply

2.048 k 1

1 hit Apply

2000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

2KX8 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

LSSOP 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply