Parametric results for: M28C16-200MS6T under EEPROMs

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Data Retention Time-Min JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

200 ns 1

1 hit Apply

AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS 1

1 hit Apply

NO 1

1 hit Apply

YES 1

1 hit Apply

10 1

1 hit Apply

R-PDIP-T24 1

1 hit Apply

e0 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

16.384 kbit 1

1 hit Apply

EEPROM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1.0 1

1 hit Apply

24 1

1 hit Apply

2.048 k 1

1 hit Apply

2000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

2KX8 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

DIP 1

1 hit Apply

DIP24,.6 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

IN-LINE 1

1 hit Apply

32 words 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply