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Parametric » Memory » DRAMs

Parametric results for: M12S64322A under DRAMs

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Manufacturer Part Number: m12s64322a
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M12S64322A-6TG
 Elite Semiconductor Memory Technology Inc 		Check for Price Active 67.1089 Mbit 32 2MX32 2.5 V 5.5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 2000000 2.0972 M SYNCHRONOUS YES 2.7 V 2.375 V CMOS COMMERCIAL R-PDSO-G86 Not Qualified 70 °C 86 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2 TSOP2, 86 unknown EAR99 8542.32.00.02
M12S64322A-7TG
 Elite Semiconductor Memory Technology Inc 		Check for Price Active 67.1089 Mbit 32 2MX32 2.5 V 6 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 2000000 2.0972 M SYNCHRONOUS YES 2.7 V 2.375 V CMOS COMMERCIAL R-PDSO-G86 Not Qualified 70 °C 86 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2 TSOP2, 86 unknown EAR99 8542.32.00.02
M12S64322A-6BG
 Elite Semiconductor Memory Technology Inc 		Check for Price Active 67.1089 Mbit 32 2MX32 2.5 V 5.5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 2000000 2.0972 M SYNCHRONOUS YES 2.7 V 2.375 V CMOS COMMERCIAL R-PBGA-B90 Not Qualified 70 °C 90 PLASTIC/EPOXY VFBGA RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1 mm 13 mm 8 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC BGA VFBGA, 90 unknown EAR99 8542.32.00.02
M12S64322A-7BG
 Elite Semiconductor Memory Technology Inc 		Check for Price Active 67.1089 Mbit 32 2MX32 2.5 V 6 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 2000000 2.0972 M SYNCHRONOUS YES 2.7 V 2.375 V CMOS COMMERCIAL R-PBGA-B90 Not Qualified 70 °C 90 PLASTIC/EPOXY VFBGA RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1 mm 13 mm 8 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC BGA VFBGA, 90 unknown EAR99 8542.32.00.02