Parametric results for: M12L64164A-6BVG2M under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

5.5 ns 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

S-PBGA-B54 1

1 hit Apply

8 mm 1

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Manufacturer (1)

Elite Semiconductor Memory Technology Inc 1

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Memory Density (1)

67.1089 Mbit 1

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SYNCHRONOUS DRAM 1

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Memory Width (1)

16 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

54 1

1 hit Apply

4.1943 M 1

1 hit Apply

4000000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

85.0 °C 1

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-40.0 °C 1

1 hit Apply

Organization (1)

4MX16 1

1 hit Apply

PLASTIC/EPOXY 1

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VFBGA 1

1 hit Apply

SQUARE 1

1 hit Apply

GRID ARRAY, VERY THIN PROFILE, FINE PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply