Findchips: Parametric Search Results for LD32

Parametric results for: LD32 under Laser Diodes

Select parts from the table below to compare.

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Select Parts		Part Number

		TOLD320BAA Toshiba America Electronic Components
		SLD327YT Sony Semiconductor
		TOLD323BAB Toshiba America Electronic Components
		TOLD321CAB Toshiba America Electronic Components
		SLD323V-1 Roithner LaserTechnik GmbH
		TOLD322BBC Toshiba America Electronic Components
		LD3207S Lumentum Operations LLC
		SLD3234VFI Sony Semiconductor
		TOLD322BCC Toshiba America Electronic Components
		SLD326YT-25 Sony Semiconductor

		Most Relevant								Technical					Operating Conditions		Physical	Dimensions	Other
Composite Price	Part Life Cycle Code	Forward Current-Max	Forward Voltage-Max	Number of Functions	Surface Mount	Mounting Feature	Peak Wavelength	Output Power-Nom	Threshold Current-Max	Configuration	Optoelectronic Device Type	Response Time-Max	Semiconductor Material	Supply Voltage-Max	Operating Temperature-Max	Operating Temperature-Min	Shape	Size	Ihs Manufacturer	Reach Compliance Code	Package Description	Date Of Intro	Fiber Optic Device Type	Operating Wavelength-Max	Operating Wavelength-Min	Operating Wavelength-Nom

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Active

150 mA

1.5 V

THROUGH HOLE MOUNT

1.31 µm

LASER DIODE

1 ns

InGaAs

65 °C

TOSHIBA CORP

unknown

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Active

790 nm

3 W

2 A

SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER

LASER DIODE

30 °C

-10 °C

ROUND

5 mm

SONY CORP

unknown

M-288, 9 PIN

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Active

150 mA

2 V

THROUGH HOLE MOUNT

1.31 µm

LASER DIODE

1 ns

InGaAs

65 °C

TOSHIBA CORP

unknown

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Active

150 mA

2 V

THROUGH HOLE MOUNT

1.31 µm

LASER DIODE

1 ns

InGaAs

65 °C

TOSHIBA CORP

unknown

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Contact Manufacturer

ROITHNER LASERTECHNIK GMBH

unknown

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Active

150 mA

1.5 V

THROUGH HOLE MOUNT

1.31 µm

LASER DIODE

1 ns

InGaAs

70 °C

-10 °C

TOSHIBA CORP

unknown

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Active

THROUGH HOLE MOUNT

2 V

70 °C

-20 °C

LUMENTUM OPERATIONS LLC

unknown

1994-10-01

SWITCH

1.67 µm

1.62 µm

1.645 µm

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Active

SONY CORP

unknown

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Active

150 mA

1.5 V

THROUGH HOLE MOUNT

1.31 µm

LASER DIODE

1 ns

InGaAs

80 °C

-30 °C

TOSHIBA CORP

unknown

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Active

8 A

2.8 V

THROUGH HOLE MOUNT

810 nm

4 W

2 A

SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER

LASER DIODE

30 °C

-10 °C

ROUND

5 mm

SONY CORP

unknown

M-288, 9 PIN

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TOLD320BAA

Toshiba America Electronic Components

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Active

150 mA

1.5 V

THROUGH HOLE MOUNT

1.31 µm

LASER DIODE

1 ns

InGaAs

65 °C

TOSHIBA CORP

unknown

SLD327YT

Sony Semiconductor

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Active

790 nm

3 W

2 A

SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER

LASER DIODE

30 °C

-10 °C

ROUND

5 mm

SONY CORP

unknown

M-288, 9 PIN

TOLD323BAB

Toshiba America Electronic Components

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Active

150 mA

2 V

THROUGH HOLE MOUNT

1.31 µm

LASER DIODE

1 ns

InGaAs

65 °C

TOSHIBA CORP

unknown

TOLD321CAB

Toshiba America Electronic Components

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Active

150 mA

2 V

THROUGH HOLE MOUNT

1.31 µm

LASER DIODE

1 ns

InGaAs

65 °C

TOSHIBA CORP

unknown

SLD323V-1

Roithner LaserTechnik GmbH

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Contact Manufacturer

ROITHNER LASERTECHNIK GMBH

unknown

TOLD322BBC

Toshiba America Electronic Components

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Active

150 mA

1.5 V

THROUGH HOLE MOUNT

1.31 µm

LASER DIODE

1 ns

InGaAs

70 °C

-10 °C

TOSHIBA CORP

unknown

LD3207S

Lumentum Operations LLC

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Active

THROUGH HOLE MOUNT

2 V

70 °C

-20 °C

LUMENTUM OPERATIONS LLC

unknown

1994-10-01

SWITCH

1.67 µm

1.62 µm

1.645 µm

SLD3234VFI

Sony Semiconductor

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Active

SONY CORP

unknown

TOLD322BCC

Toshiba America Electronic Components

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Active

150 mA

1.5 V

THROUGH HOLE MOUNT

1.31 µm

LASER DIODE

1 ns

InGaAs

80 °C

-30 °C

TOSHIBA CORP

unknown

SLD326YT-25

Sony Semiconductor

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Active

8 A

2.8 V

THROUGH HOLE MOUNT

810 nm

4 W

2 A

SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER

LASER DIODE

30 °C

-10 °C

ROUND

5 mm

SONY CORP

unknown

M-288, 9 PIN

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