Parametric results for: LAE4001 under RF Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

HIGH RELIABILITY 1

6 hits Apply

EMITTER 2

6 hits Apply

Collector Current-Max (IC) (1)

80 mA 6

6 hits Apply

Collector-Emitter Voltage-Max (1)

16 V 3

6 hits Apply

Configuration (1)

SINGLE 6

6 hits Apply

DC Current Gain-Min (hFE) (1)

20.0 3

6 hits Apply

Highest Frequency Band (1)

S BAND 3

6 hits Apply

O-CRDB-F4 1 O-CRMW-F4 1 S-CQMW-F4 1

6 hits Apply

e0 3

6 hits Apply

Manufacturer (4)

Advanced Semiconductor Inc 1 North American Philips Discrete Products Div 1 NXP Semiconductors 2 Philips Semiconductors 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

4 3

6 hits Apply

200.0 °C 5

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

6 hits Apply

ROUND 2 SQUARE 1

6 hits Apply

DISK BUTTON 1 MICROWAVE 2

6 hits Apply

Active 1 Obsolete 2 Transferred 3

6 hits Apply

Polarity/Channel Type (1)

NPN 6

6 hits Apply

480 mW 1

6 hits Apply

480 mW 3

6 hits Apply

Power Gain-Min (Gp) (1)

8.5 dB 1

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply

Transition Frequency-Nom (fT) (1)

4 GHz 1

6 hits Apply