Findchips: Parametric Search Results for KSH112I


Select Parts		Part Number

		KSH112I Fairchild Semiconductor Corporation
		KSH112-I Samsung Semiconductor
		KSH112-I Fairchild Semiconductor Corporation
		KSH112-I onsemi
		KSH112ITU Fairchild Semiconductor Corporation

				Most Relevant									Technical						Compliance				Operating Conditions	Physical						Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Collector-Emitter Voltage-Max	Collector Current-Max (IC)	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	Number of Elements	DC Current Gain-Min (hFE)	Transition Frequency-Nom (fT)	Additional Feature	Collector-Base Capacitance-Max	Power Dissipation Ambient-Max	Power Dissipation-Max (Abs)	Transistor Element Material	VCEsat-Max	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Operating Temperature-Max	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Obsolete

100 V

2 A

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

25 MHz

BUILT IN BIAS RESISTANCE RATIO IS 0.06

SILICON

TO-251

R-PSIP-T3

Not Qualified

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

TO-251

IN-LINE, R-PSIP-T3

unknown

Check for Price

Obsolete

100 V

2 A

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

25 MHz

100 pF

20 W

SILICON

3 V

R-PSIP-T3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

SAMSUNG SEMICONDUCTOR INC

IN-LINE, R-PSIP-T3

unknown

EAR99

8541.29.00.95

Check for Price

Obsolete

100 V

2 A

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

25 MHz

BUILT IN BIAS RESISTANCE RATIO IS 0.06

20 W

SILICON

R-PSIP-T3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

IPAK-3

compliant

EAR99

Check for Price

Active

100 V

2 A

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

25 MHz

BUILT IN BIAS RESISTOR RATIO IS 0.06

SILICON

R-PSIP-T3

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

ON SEMICONDUCTOR

IPAK-3

compliant

EAR99

Check for Price

Yes

Obsolete

100 V

2 A

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

25 MHz

20 W

SILICON

TO-251

R-PSIP-T3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

TO-251

IPAK-3

not_compliant

EAR99

Compare

KSH112I

Fairchild Semiconductor Corporation

Check for Price

Obsolete

100 V

2 A

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

25 MHz

BUILT IN BIAS RESISTANCE RATIO IS 0.06

SILICON

TO-251

R-PSIP-T3

Not Qualified

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

TO-251

IN-LINE, R-PSIP-T3

unknown

KSH112-I

Samsung Semiconductor

Check for Price

Obsolete

100 V

2 A

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

25 MHz

100 pF

20 W

SILICON

3 V

R-PSIP-T3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

SAMSUNG SEMICONDUCTOR INC

IN-LINE, R-PSIP-T3

unknown

EAR99

8541.29.00.95

KSH112-I

Fairchild Semiconductor Corporation

Check for Price

Obsolete

100 V

2 A

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

25 MHz

BUILT IN BIAS RESISTANCE RATIO IS 0.06

20 W

SILICON

R-PSIP-T3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

IPAK-3

compliant

EAR99

KSH112-I

onsemi

Check for Price

Active

100 V

2 A

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

25 MHz

BUILT IN BIAS RESISTOR RATIO IS 0.06

SILICON

R-PSIP-T3

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

THROUGH-HOLE

SINGLE

ON SEMICONDUCTOR

IPAK-3

compliant

EAR99

KSH112ITU

Fairchild Semiconductor Corporation

Check for Price

Yes

Obsolete

100 V

2 A

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

25 MHz

20 W

SILICON

TO-251

R-PSIP-T3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

MATTE TIN

THROUGH-HOLE

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

TO-251

IPAK-3

not_compliant

EAR99

Parametric results for: KSH112I under Power Bipolar Transistors