Parametric results for: KMM5368005BSWG-6 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE WITH EDO 1

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Access Time-Max (1)

60 ns 1

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RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1

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COMMON 1

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R-XSMA-N72 1

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Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

301.9899 Mbit 1

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EDO DRAM MODULE 1

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Memory Width (1)

36 1

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1.0 1

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1 1

1 hit Apply

72 1

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8.3886 M 1

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8000000.0 1

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ASYNCHRONOUS 1

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70.0 °C 1

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0.0 °C 1

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Organization (1)

8MX36 1

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3-STATE 1

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UNSPECIFIED 1

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SIMM 1

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SSIM72 1

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RECTANGULAR 1

1 hit Apply

MICROELECTRONIC ASSEMBLY 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply