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Parametric results for: KM736V849 under SRAMs

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Manufacturer Part Number: km736v849
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KM736V849T-67
 Samsung Semiconductor 		Check for Price No Obsolete 9.4372 Mbit 36 256KX36 3.3 V 3.8 ns 149 MHz ZBT SRAM PIPELINED ARCHITECTURE COMMON 1 256000 262.144 k SYNCHRONOUS 3-STATE PARALLEL 10 mA 3.14 V 420 µA 3.465 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified e0 70 °C 100 PLASTIC/EPOXY LQFP QFP100,.63X.87 RECTANGULAR FLATPACK, LOW PROFILE YES Tin/Lead (Sn/Pb) GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, QFP100,.63X.87 100 unknown 3A991.B.2.A 8542.32.00.41
KM736V849T-75
 Samsung Semiconductor 		Check for Price No Obsolete 9.4372 Mbit 36 256KX36 3.3 V 4.2 ns 133 MHz ZBT SRAM PIPELINED ARCHITECTURE COMMON 1 256000 262.144 k SYNCHRONOUS 3-STATE PARALLEL 10 mA 3.14 V 370 µA 3.465 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified e0 70 °C 100 PLASTIC/EPOXY LQFP QFP100,.63X.87 RECTANGULAR FLATPACK, LOW PROFILE YES Tin/Lead (Sn/Pb) GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, QFP100,.63X.87 100 unknown 3A991.B.2.A 8542.32.00.41
KM736V849H-75
 Samsung Semiconductor 		Check for Price No Obsolete 9.4372 Mbit 36 256KX36 3.3 V 4.2 ns 133 MHz ZBT SRAM SELF-TIMED WRITE CYCLE; POWER DOWN OPTION COMMON 1 256000 262.144 k SYNCHRONOUS 3-STATE PARALLEL 30 mA 3.14 V 370 µA 3.465 V 3.135 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified e0 70 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES TIN LEAD BALL 1.27 mm BOTTOM 22 mm 14 mm SAMSUNG SEMICONDUCTOR INC BGA BGA, BGA119,7X17,50 119 unknown 3A991.B.2.A 8542.32.00.41
KM736V849T-50
 Samsung Semiconductor 		Check for Price No Obsolete 9.4372 Mbit 36 256KX36 3.3 V 3.2 ns ZBT SRAM PIPELINED ARCHITECTURE 1 256000 262.144 k SYNCHRONOUS PARALLEL 3.465 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified 70 °C 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, 100 compliant 3A991.B.2.A 8542.32.00.41
KM736V849T-60
 Samsung Semiconductor 		Check for Price No Obsolete 9.4372 Mbit 36 256KX36 3.3 V 3.5 ns ZBT SRAM PIPELINED ARCHITECTURE 1 256000 262.144 k SYNCHRONOUS PARALLEL 3.465 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified 70 °C 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, 100 compliant 3A991.B.2.A 8542.32.00.41
KM736V849T-75T
 Samsung Semiconductor 		Check for Price Obsolete 9.4372 Mbit 36 256KX36 3.3 V 4.2 ns ZBT SRAM PIPELINED ARCHITECTURE 1 256000 262.144 k SYNCHRONOUS PARALLEL 3.465 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified 70 °C 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, 100 unknown 3A991.B.2.A 8542.32.00.41
KM736V849-67
 Samsung Semiconductor 		Check for Price Obsolete 9.4372 Mbit 36 256KX36 3.3 V 3.8 ns ZBT SRAM 1 256000 262.144 k SYNCHRONOUS PARALLEL 3.465 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified 70 °C 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, 100 unknown 3A991.B.2.A 8542.32.00.41
KM736V849H-67
 Samsung Semiconductor 		Check for Price No Obsolete 9.4372 Mbit 36 256KX36 3.3 V 3.8 ns 149 MHz ZBT SRAM SELF-TIMED WRITE CYCLE; POWER DOWN OPTION COMMON 1 256000 262.144 k SYNCHRONOUS 3-STATE PARALLEL 30 mA 3.14 V 420 µA 3.465 V 3.135 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified e0 70 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES TIN LEAD BALL 1.27 mm BOTTOM 22 mm 14 mm SAMSUNG SEMICONDUCTOR INC BGA BGA, BGA119,7X17,50 119 unknown 3A991.B.2.A 8542.32.00.41
KM736V849-75
 Samsung Semiconductor 		Check for Price Obsolete 9.4372 Mbit 36 256KX36 3.3 V 4.2 ns ZBT SRAM 1 256000 262.144 k SYNCHRONOUS PARALLEL 3.465 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified 70 °C 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, 100 unknown 3A991.B.2.A 8542.32.00.41
KM736V849H-10
 Samsung Semiconductor 		Check for Price No Obsolete 9.4372 Mbit 36 256KX36 3.3 V 5 ns 100 MHz ZBT SRAM SELF-TIMED WRITE CYCLE; POWER DOWN OPTION COMMON 1 256000 262.144 k SYNCHRONOUS 3-STATE PARALLEL 30 mA 3.14 V 300 µA 3.465 V 3.135 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified e0 70 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES TIN LEAD BALL 1.27 mm BOTTOM 22 mm 14 mm SAMSUNG SEMICONDUCTOR INC BGA BGA, BGA119,7X17,50 119 unknown 3A991.B.2.A 8542.32.00.41
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