Parametric results for: KM736N-LFR under SRAMs

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Manufacturer Part Number: km736
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KM736V889T-67
Samsung Semiconductor
Check for Price No Obsolete 9.4372 Mbit 36 256KX36 3.3 V 3.8 ns 149 MHz CACHE SRAM PIPELINED ARCHITECTURE COMMON 1 256000 262.144 k SYNCHRONOUS 3-STATE PARALLEL 30 mA 3.14 V 400 µA 3.465 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified e0 70 °C 100 PLASTIC/EPOXY LQFP QFP100,.63X.87 RECTANGULAR FLATPACK, LOW PROFILE YES TIN LEAD GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, QFP100,.63X.87 100 unknown 3A991.B.2.A 8542.32.00.41
KM736V689A-72
Samsung Semiconductor
Check for Price Obsolete SAMSUNG SEMICONDUCTOR INC QFP LQFP, 100 unknown 3A991.B.2.A 8542.32.00.41
KM736V795-72
Samsung Semiconductor
Check for Price Obsolete 4.7186 Mbit 36 128KX36 3.3 V 4 ns STANDARD SRAM ONCHIP ADDRESS COUNTER; SELF TIMED WRITE CYCLE 1 128000 131.072 k SYNCHRONOUS PARALLEL 3.6 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified 70 °C 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, 100 unknown 3A991.B.2.A 8542.32.00.41
KM736V799H-55
Samsung Semiconductor
Check for Price No Obsolete 4.7186 Mbit 36 128KX36 3.3 V 3.1 ns 185 MHz CACHE SRAM SELF-TIMED WRITE CYCLE; POWER DOWN OPTION COMMON 1 128000 131.072 k SYNCHRONOUS 3-STATE SERIAL 30 mA 3.14 V 450 µA 3.465 V 3.135 V CMOS COMMERCIAL R-PBGA-B119 Not Qualified e0 70 °C 119 PLASTIC/EPOXY BGA BGA119,7X17,50 RECTANGULAR GRID ARRAY YES TIN LEAD BALL 1.27 mm BOTTOM 22 mm 14 mm SAMSUNG SEMICONDUCTOR INC BGA BGA, BGA119,7X17,50 119 unknown 3A991.B.2.A 8542.32.00.41
KM736V687-800000
Samsung Semiconductor
Check for Price Obsolete 2.3593 Mbit 36 64KX36 3.3 V 8.5 ns CACHE SRAM 1 64000 65.536 k SYNCHRONOUS PARALLEL 3.47 V 3.13 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified 70 °C 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, 100 unknown 3A991.B.2.A 8542.32.00.41
KM736V747T-8
Samsung Semiconductor
Check for Price No Obsolete 4.7186 Mbit 36 128KX36 3.3 V 8 ns 100 MHz ZBT SRAM SELF-TIMED WRITE CYCLE; POWER DOWN OPTION COMMON 1 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 30 mA 3.14 V 300 µA 3.465 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified e0 70 °C 100 PLASTIC/EPOXY LQFP QFP100,.63X.87 RECTANGULAR FLATPACK, LOW PROFILE YES TIN LEAD GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, QFP100,.63X.87 100 unknown 3A991.B.2.A 8542.32.00.41
KM736V689-7
Samsung Semiconductor
Check for Price Obsolete SAMSUNG SEMICONDUCTOR INC , unknown EAR99 8542.32.00.41
KM736V790T-72
Samsung Semiconductor
Check for Price No Obsolete 4.7186 Mbit 36 128KX36 3.3 V 4.5 ns 138 MHz CACHE SRAM PIPELINED ARCHITECTURE COMMON 1 128000 131.072 k SYNCHRONOUS 3-STATE PARALLEL 20 mA 3.14 V 350 µA 3.6 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified e0 70 °C 100 PLASTIC/EPOXY LQFP QFP100,.63X.87 RECTANGULAR FLATPACK, LOW PROFILE YES Tin/Lead (Sn/Pb) GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, QFP100,.63X.87 100 unknown 3A991.B.2.A 8542.32.00.41
KM736V847-8
Samsung Semiconductor
Check for Price Obsolete 9.4372 Mbit 36 256KX36 3.3 V 8.5 ns ZBT SRAM 1 256000 262.144 k SYNCHRONOUS PARALLEL 3.465 V 3.135 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified 70 °C 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, 100 unknown 3A991.B.2.A 8542.32.00.41
KM736S849-10
Samsung Semiconductor
Check for Price Obsolete 9.4372 Mbit 36 256KX36 2.5 V 5 ns ZBT SRAM 1 256000 262.144 k SYNCHRONOUS PARALLEL 2.625 V 2.375 V CMOS COMMERCIAL R-PQFP-G100 Not Qualified 70 °C 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm SAMSUNG SEMICONDUCTOR INC QFP LQFP, 100 unknown 3A991.B.2.A 8542.32.00.41