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KM736V889T-67
Samsung Semiconductor
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Check for Price | No | Obsolete | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | 149 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 400 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||
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KM736V689A-72
Samsung Semiconductor
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Check for Price | Obsolete | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||||||||||||||||||||||||||||||||
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KM736V795-72
Samsung Semiconductor
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Check for Price | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 4 ns | STANDARD SRAM | ONCHIP ADDRESS COUNTER; SELF TIMED WRITE CYCLE | 1 | 128000 | 131.072 k | SYNCHRONOUS | PARALLEL | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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KM736V799H-55
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.1 ns | 185 MHz | CACHE SRAM | SELF-TIMED WRITE CYCLE; POWER DOWN OPTION | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | SERIAL | 30 mA | 3.14 V | 450 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA | BGA, BGA119,7X17,50 | 119 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||
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KM736V687-800000
Samsung Semiconductor
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Check for Price | Obsolete | 2.3593 Mbit | 36 | 64KX36 | 3.3 V | 8.5 ns | CACHE SRAM | 1 | 64000 | 65.536 k | SYNCHRONOUS | PARALLEL | 3.47 V | 3.13 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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KM736V747T-8
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | 100 MHz | ZBT SRAM | SELF-TIMED WRITE CYCLE; POWER DOWN OPTION | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 300 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||
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KM736V689-7
Samsung Semiconductor
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Check for Price | Obsolete | SAMSUNG SEMICONDUCTOR INC | , | unknown | EAR99 | 8542.32.00.41 | |||||||||||||||||||||||||||||||||||||||||||||
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KM736V790T-72
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 4.5 ns | 138 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3.14 V | 350 µA | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||
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KM736V847-8
Samsung Semiconductor
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Check for Price | Obsolete | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 8.5 ns | ZBT SRAM | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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KM736S849-10
Samsung Semiconductor
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Check for Price | Obsolete | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 5 ns | ZBT SRAM | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 |