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KM718V089P-60
Samsung Semiconductor
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Check for Price | Yes | Active | 18.8744 Mbit | 18 | 1MX18 | 3.5 ns | 166 MHz | STANDARD SRAM | COMMON | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 420 µA | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | QFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK | YES | GULL WING | 635 µm | QUAD | SAMSUNG SEMICONDUCTOR INC | QFP, QFP100,.63X.87 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||
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KM718V089H-10
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 3.3 V | 4.5 ns | 100 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 320 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA, BGA119,7X17,50 | unknown | 3A991.B.2.A | 8542.32.00.41 | BGA | 119 | |||
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KM718V089P-54
Samsung Semiconductor
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Check for Price | Yes | Active | 18.8744 Mbit | 18 | 1MX18 | 3.3 ns | 185 MHz | STANDARD SRAM | COMMON | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 450 µA | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | QFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK | YES | GULL WING | 635 µm | QUAD | SAMSUNG SEMICONDUCTOR INC | QFP, QFP100,.63X.87 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||
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KM718V089H-67
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 3.3 V | 3.8 ns | 149 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 400 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA, BGA119,7X17,50 | unknown | 3A991.B.2.A | 8542.32.00.41 | BGA | 119 | |||
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KM718V089T-72
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 3.3 V | 4 ns | 138 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 380 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | LQFP, QFP100,.63X.87 | unknown | 3A991.B.2.A | 8542.32.00.41 | QFP | 100 | ||
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KM718V089T-67
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 3.3 V | 3.8 ns | 149 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 400 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | LQFP, QFP100,.63X.87 | unknown | 3A991.B.2.A | 8542.32.00.41 | QFP | 100 | ||
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KM718V089T-10
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 3.3 V | 4.5 ns | 100 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 320 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | LQFP, QFP100,.63X.87 | unknown | 3A991.B.2.A | 8542.32.00.41 | QFP | 100 | ||
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KM718V089T-54
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 3.3 V | 3.3 ns | 185 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 450 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | LQFP, QFP100,.63X.87 | unknown | 3A991.B.2.A | 8542.32.00.41 | QFP | 100 | ||
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KM718V089H-72
Samsung Semiconductor
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 3.3 V | 4 ns | 138 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 380 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e0 | 70 °C | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1.27 mm | BOTTOM | 22 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | BGA, BGA119,7X17,50 | unknown | 3A991.B.2.A | 8542.32.00.41 | BGA | 119 | |||
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KM718V089P-72
Samsung Semiconductor
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Check for Price | Yes | Active | 18.8744 Mbit | 18 | 1MX18 | 4 ns | 138 MHz | STANDARD SRAM | COMMON | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 380 µA | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | QFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK | YES | GULL WING | 635 µm | QUAD | SAMSUNG SEMICONDUCTOR INC | QFP, QFP100,.63X.87 | compliant | 3A991.B.2.A | 8542.32.00.41 |