Parametric results for: KM718B86J-8 under SRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

8 ns 1

1 hit Apply

COMMON 1

1 hit Apply

S-PQCC-J52 1

1 hit Apply

e0 1

1 hit Apply

19.05 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

1.1796 Mbit 1

1 hit Apply

CACHE SRAM 1

1 hit Apply

Memory Width (1)

18 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

52 1

1 hit Apply

65.536 k 1

1 hit Apply

64000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

64KX18 1

1 hit Apply

3-STATE 1

1 hit Apply

YES 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

QCCJ 1

1 hit Apply

LDCC52,.8SQ 1

1 hit Apply

SQUARE 1

1 hit Apply

CHIP CARRIER 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply