Parametric results for: KM616V1002CFI-12 under SRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

12 ns 1

1 hit Apply

COMMON 1

1 hit Apply

R-PBGA-B48 1

1 hit Apply

e0 1

1 hit Apply

7 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

1.0486 Mbit 1

1 hit Apply

STANDARD SRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

1.0 1

1 hit Apply

48 1

1 hit Apply

65.536 k 1

1 hit Apply

64000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

64KX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TFBGA 1

1 hit Apply

BGA48,6X8,30 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY, THIN PROFILE, FINE PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply