Parametric results for: KM41C1000CG-6 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE 1

1 hit Apply

Access Time-Max (1)

60 ns 1

1 hit Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1

1 hit Apply

SEPARATE 1

1 hit Apply

R-PQCC-J18 1

1 hit Apply

e0 1

1 hit Apply

12.446 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

1.0486 Mbit 1

1 hit Apply

FAST PAGE DRAM 1

1 hit Apply

Memory Width (1)

1 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

18 1

1 hit Apply

1.0486 M 1

1 hit Apply

1000000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

1MX1 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

QCCJ 1

1 hit Apply

LDCC18,.33X.53 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

CHIP CARRIER 1

1 hit Apply

Refresh Cycles (1)

512 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply