Parametric results for: KM416V4104AS-L5 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE WITH EDO 1

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Access Time-Max (1)

50 ns 1

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RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH 1

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COMMON 1

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R-PDSO-G50 1

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e0 1

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20.95 mm 1

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Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

67.1089 Mbit 1

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EDO DRAM 1

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Memory Width (1)

16 1

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1.0 1

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1 1

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50 1

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4.1943 M 1

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4000000.0 1

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ASYNCHRONOUS 1

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70.0 °C 1

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0.0 °C 1

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Organization (1)

4MX16 1

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3-STATE 1

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PLASTIC/EPOXY 1

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TSOP2 1

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TSOP50,.46,32 1

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RECTANGULAR 1

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SMALL OUTLINE, THIN PROFILE 1

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Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply