Parametric results for: K9F4G08B0B under Flash Memories

All Filters Access Time-Max JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

25 ns 3

3 hits Apply

R-PDSO-G48 3

3 hits Apply

18.4 mm 1 20 mm 2

Min (mm) - Max (mm)

3 hits Apply

Manufacturer (1)

Samsung Semiconductor 3

3 hits Apply

Memory Density (1)

4.295 Gbit 3

3 hits Apply

FLASH 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

1.0 3

3 hits Apply

48 3

3 hits Apply

536.8709 M 3

3 hits Apply

5.12E8 3

3 hits Apply

ASYNCHRONOUS 3

3 hits Apply

70.0 °C 2 85.0 °C 1

Min (°C) - Max (°C)

3 hits Apply

-40.0 °C 1 0.0 °C 2

Min (°C) - Max (°C)

3 hits Apply

Organization (1)

512MX8 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

TSOP1 1 TSSOP 2

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 2 SMALL OUTLINE, THIN PROFILE 1

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

2.7 V 3

3 hits Apply