Parametric results for: K8D6316UTMDC0800 under Flash Memories

All Filters Access Time-Max Alternate Memory Width Boot Block JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

80 ns 1

1 hit Apply

8 1

1 hit Apply

TOP 1

1 hit Apply

R-PBGA-B48 1

1 hit Apply

e1 1

1 hit Apply

9 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

67.1089 Mbit 1

1 hit Apply

FLASH 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

2 1

1 hit Apply

1.0 1

1 hit Apply

48 1

1 hit Apply

4.1943 M 1

1 hit Apply

4000000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

4MX16 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

VFBGA 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY, VERY THIN PROFILE, FINE PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3 V 1

1 hit Apply