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K7R641884M-FI200
Samsung Semiconductor
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Check for Price | No | Obsolete | 75.4975 Mbit | 18 | 4MX18 | 1.8 V | 450 ps | 200 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | PARALLEL | 1.7 V | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | SAMSUNG SEMICONDUCTOR INC | BGA | LBGA, BGA165,11X15,40 | 165 | unknown | 3A991.B.2.A | 8542.32.00.41 |