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K7R321884C-FI33T
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 333 MHz | STANDARD SRAM | SEPARATE | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 350 mA | 1.7 V | 800 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 1 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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K7R321884C-FI25T
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 250 MHz | STANDARD SRAM | SEPARATE | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 300 mA | 1.7 V | 700 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 1 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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K7R321884C-FC250
Samsung Semiconductor
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Check for Price | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 250 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 300 mA | 1.7 V | 700 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 70 °C | 240 | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | SAMSUNG SEMICONDUCTOR INC | 15 X 17 MM, 1MM PITCH, FBGA-165 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | BGA | 165 | |||||
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K7R321884C-EI30
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 300 MHz | STANDARD SRAM | SEPARATE | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 330 mA | 1.7 V | 750 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 3 | 85 °C | -40 °C | 260 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K7R321884C-EI25
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 250 MHz | STANDARD SRAM | SEPARATE | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 300 mA | 1.7 V | 700 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 3 | 85 °C | -40 °C | 260 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K7R321884C-FI300
Samsung Semiconductor
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Check for Price | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 300 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 330 mA | 1.7 V | 750 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 1 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | SAMSUNG SEMICONDUCTOR INC | LBGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | BGA | 165 | |||||||
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K7R321884C-EI250
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 250 MHz | QDR SRAM | PIPELINED ARCHITECTURE | SEPARATE | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 300 mA | 1.7 V | 700 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 17 mm | 15 mm | SAMSUNG SEMICONDUCTOR INC | LBGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | BGA | 165 | ||||||
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K7R321884C-FI30T
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 300 MHz | STANDARD SRAM | SEPARATE | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 330 mA | 1.7 V | 750 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 1 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||
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K7R321884C-FC30T
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 300 MHz | STANDARD SRAM | SEPARATE | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 330 mA | 1.7 V | 750 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 70 °C | 240 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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K7R321884C-FC33
Samsung Semiconductor
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Check for Price | No | No | Obsolete | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 450 ps | 333 MHz | STANDARD SRAM | SEPARATE | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 350 mA | 1.7 V | 800 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | 3 | 70 °C | 240 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | BALL | 1 mm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | BGA, BGA165,11X15,40 | unknown | 3A991.B.2.A | 8542.32.00.41 |